PartNumber | KSC5502DTM | KSC5502DTM-CUT TAPE | KSC5502DT |
Description | Bipolar Transistors - BJT NPN Triple Diffused Planar Silicon | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | E | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Base Voltage VCBO | 1.2 kV | - | - |
Emitter Base Voltage VEBO | 12 V | - | - |
Collector Emitter Saturation Voltage | 0.31 V | - | - |
Maximum DC Collector Current | 2 A | - | - |
Gain Bandwidth Product fT | 11 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | KSC5502D | - | - |
Height | 2.3 mm | - | - |
Length | 6.6 mm | - | - |
Packaging | Reel | - | - |
Width | 6.1 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Continuous Collector Current | 2 A | - | - |
DC Collector/Base Gain hfe Min | 14 | - | - |
Pd Power Dissipation | 75 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.009184 oz | - | - |