PartNumber | KSD1020GBU | KSD1020YTA | KSD1021YTA |
Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Transistor | Bipolar Transistors - BJT NPN Epitaxial Sil |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | T | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 25 V | 25 V | 30 V |
Collector Base Voltage VCBO | 30 V | 30 V | 40 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Maximum DC Collector Current | 0.7 A | 0.7 A | 1 A |
Gain Bandwidth Product fT | 170 MHz | 170 MHz | 130 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 400 | 400 | 400 |
Height | 3.7 mm | 3.7 mm | 3.7 mm |
Length | 4 mm | 4 mm | 4 mm |
Packaging | Bulk | Ammo Pack | Ammo Pack |
Width | 2.31 mm | 2.31 mm | 2.31 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
DC Collector/Base Gain hfe Min | 120 | 120 | 120 |
Pd Power Dissipation | 350 mW | 350 mW | 350 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.008466 oz | 0.008466 oz | 0.008466 oz |
Continuous Collector Current | - | - | 1 A |