PartNumber | KSD2012GTU | KSD2012YYDTU | KSD2012YTU |
Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Epitaxial Sil |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | E | E |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 60 V | 60 V | 60 V |
Collector Base Voltage VCBO | 60 V | 60 V | 60 V |
Emitter Base Voltage VEBO | 7 V | 7 V | 7 V |
Collector Emitter Saturation Voltage | 0.4 V | 0.4 V | 0.4 V |
Maximum DC Collector Current | 3 A | 3 A | 3 A |
Gain Bandwidth Product fT | 3 MHz | 3 MHz | 3 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | KSD2012 | - | - |
DC Current Gain hFE Max | 320 | 320 | 320 |
Height | 9.19 mm | 9.19 mm | 9.19 mm |
Length | 10.16 mm | 10.16 mm | 10.16 mm |
Packaging | Tube | Tube | Tube |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 3 A | 3 A | 3 A |
Pd Power Dissipation | 25 W | 25 W | 25 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | 50 | 50 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.080072 oz | 0.080072 oz | 0.080072 oz |