 |  | |
| PartNumber | KSP10BU | KSP10B |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | |
| Manufacturer | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | Through Hole | - |
| Package / Case | TO-92-3 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 25 V | - |
| Collector Base Voltage VCBO | 30 V | - |
| Emitter Base Voltage VEBO | 3 V | - |
| Gain Bandwidth Product fT | 650 MHz | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | KSP10 | - |
| Height | 4.7 mm | - |
| Length | 4.7 mm | - |
| Packaging | Bulk | - |
| Width | 3.93 mm | - |
| Brand | ON Semiconductor / Fairchild | - |
| DC Collector/Base Gain hfe Min | 60 | - |
| Pd Power Dissipation | 350 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 10000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | KSP10BU_NL | - |
| Unit Weight | 0.006314 oz | - |
