KST3906M

KST3906MTF vs KST3906MT vs KST3906MTF-NL

 
PartNumberKST3906MTFKST3906MTKST3906MTF-NL
DescriptionBipolar Transistors - BJT PNP Si Transistor Epitaxial
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.4 V- 0.4 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesKST3906--
DC Current Gain hFE Max300300-
Height0.93 mm--
Length2.92 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 0.2 A- 0.2 A-
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesKST3906MTF_NL--
Unit Weight0.000282 oz0.002116 oz-
Part Aliases-KST3906MTF_NL-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
Power Max-350mW-
Transistor Type-PNP-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-40V-
DC Current Gain hFE Min Ic Vce-100 @ 10mA, 1V-
Vce Saturation Max Ib Ic-400mV @ 5mA, 50mA-
Current Collector Cutoff Max---
Frequency Transition-250MHz-
Pd Power Dissipation-350 mW-
Collector Emitter Voltage VCEO Max-- 40 V-
Collector Base Voltage VCBO-- 40 V-
Emitter Base Voltage VEBO-- 5 V-
DC Collector Base Gain hfe Min-100-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KST3906MTF Bipolar Transistors - BJT PNP Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
KST3906MTF TRANS PNP 40V 0.2A SOT23
KST3906MT New and Original
KST3906MTF-NL New and Original
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