PartNumber | KST55MTF | KST5551MTF | KST5550MTF |
Description | Bipolar Transistors - BJT PNP Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | |
Manufacturer | ON Semiconductor | FAIRCHILD | FAIRCHIL |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | Transistors (BJT) - Single |
RoHS | Y | Details | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23 | - |
Transistor Polarity | PNP | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 60 V | 160 V | - |
Collector Base Voltage VCBO | - 60 V | 180 V | - |
Emitter Base Voltage VEBO | - 4 V | 6 V | - |
Collector Emitter Saturation Voltage | - 0.25 V | 0.2 V | 0.25 V |
Maximum DC Collector Current | 0.5 A | 0.6 A | 0.6 A |
Gain Bandwidth Product fT | 50 MHz | 300 MHz | 300 MHz |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | KST55 | - | - |
Height | 0.93 mm | - | - |
Length | 2.92 mm | - | - |
Packaging | Reel | Reel | Reel |
Width | 1.3 mm | - | - |
Brand | ON Semiconductor / Fairchild | Fairchild Semiconductor | - |
Continuous Collector Current | - 0.5 A | 0.6 A | 0.6 A |
DC Collector/Base Gain hfe Min | 50 | 80 | - |
Pd Power Dissipation | 350 mW | 350 mW | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000282 oz | 0.002116 oz | 0.002116 oz |
DC Current Gain hFE Max | - | 250 | 250 |
Minimum Operating Temperature | - | - 55 C | - |
Part # Aliases | - | KST5551MTF_NL | - |
Part Aliases | - | - | KST5550MTF_NL |
Package Case | - | - | SOT-23 |
Pd Power Dissipation | - | - | 350 mW |
Collector Emitter Voltage VCEO Max | - | - | 140 V |
Collector Base Voltage VCBO | - | - | 160 V |
Emitter Base Voltage VEBO | - | - | 6 V |
DC Collector Base Gain hfe Min | - | - | 60 |