LET91

LET9120 vs LET9180 vs LET9150

 
PartNumberLET9120LET9180LET9150
DescriptionRF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHzRF MOSFET Transistors 180W 32V Wideband LDMOS TRANSISTORRF MOSFET Transistors RF Power LdmoST 150W 20 dB 860MHz
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
RoHSYYY
Transistor PolarityN-Channel-N-Channel
TechnologySiSiSi
Id Continuous Drain Current18 A-20 A
Vds Drain Source Breakdown Voltage80 V-80 V
Gain18 dB-20 dB
Output Power120 W-150 W
Maximum Operating Temperature+ 150 C-+ 150 C
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseM246-M246
PackagingBulkBulkBulk
ConfigurationDual-Dual
Operating Frequency1.6 GHz-2 GHz
SeriesLET9120LET9180LET9150
TypeRF Power MOSFET-RF Power MOSFET
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Pd Power Dissipation200 W-269 W
Product TypeRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
Factory Pack Quantity606060
SubcategoryMOSFETsMOSFETsMOSFETs
Vgs Gate Source Voltage15 V-15 V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
LET9120 RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz
LET9180 RF MOSFET Transistors 180W 32V Wideband LDMOS TRANSISTOR
LET9150 RF MOSFET Transistors RF Power LdmoST 150W 20 dB 860MHz
LET9180 IC RF TRANSISTOR LDMOS M246
LET9150 RF MOSFET Transistors RF Power LdmoST 150W 20 dB 860MHz
LET9120 RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz
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