LND0

LND01K1-G vs LND01K1 vs LND056

 
PartNumberLND01K1-GLND01K1LND056
DescriptionMOSFET Lateral N-Ch MOSFET Depletion-Mode
ManufacturerMicrochipMicrochip Technology-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-5--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage9 V--
Id Continuous Drain Current330 mA--
Rds On Drain Source Resistance1.4 Ohms--
Vgs Gate Source Voltage600 mV--
Maximum Operating Temperature+ 125 C+ 125 C-
Pd Power Dissipation360 mW--
ConfigurationSingleSingle-
Channel ModeDepletionDepletion-
PackagingReelDigi-ReelR Alternate Packaging-
SeriesLND01LND01-
Transistor Type1 N-Channel1 N-Channel-
BrandMicrochip Technology--
Fall Time6.4 ns6.4 ns-
Product TypeMOSFET--
Rise Time11 ns11 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time1 ns1 ns-
Typical Turn On Delay Time3.8 ns3.8 ns-
Unit Weight0.000222 oz0.001058 oz-
Package Case-SC-74A, SOT-753-
Operating Temperature--25°C ~ 125°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-5-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-360mW-
Drain to Source Voltage Vdss-9V-
Input Capacitance Ciss Vds-46pF @ 5V-
FET Feature-Depletion Mode-
Current Continuous Drain Id 25°C-330mA (Tj)-
Rds On Max Id Vgs-1.4 Ohm @ 100mA, 0V-
Vgs th Max Id---
Gate Charge Qg Vgs---
Pd Power Dissipation-360 mW-
Vgs Gate Source Voltage-600 mV-
Id Continuous Drain Current-330 mA-
Vds Drain Source Breakdown Voltage-9 V-
Rds On Drain Source Resistance-1.4 Ohms-
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
LND01K1-G MOSFET Lateral N-Ch MOSFET Depletion-Mode
LND01K1-G MOSFET N-CH 9V 330MA SOT23-5
LND01K1 New and Original
LND056 New and Original
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