 |  | | |
| PartNumber | LND150N8-G | LND150N8-G-CUT TAPE | LND150N8 |
| Description | MOSFET 500V 1KOhm | MOSFET 500V 1KOhm | |
| Manufacturer | Microchip | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 30 mA | - | - |
| Rds On Drain Source Resistance | 1 kOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.6 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Depletion | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 4.6 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | FET | - | - |
| Width | 2.6 mm | - | - |
| Brand | Microchip Technology | - | - |
| Forward Transconductance Min | 1 mS | - | - |
| Fall Time | 1.3 us | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 0.45 us | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 0.1 us | - | - |
| Typical Turn On Delay Time | 0.09 us | - | - |
| Unit Weight | 0.001862 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip Technology |
LND150N8-G | MOSFET 500V 1KOhm | |
| LND150N8-G-CUT TAPE | New and Original | ||
| LND150N8 | MOSFET 500V 1KOhm | ||
| LND150N8-G | MOSFET N-CH 500V 30MA SOT89-3 | ||
| LND150N8-G/MICROCHIP | New and Original | ||
| LND150N8-GMICROCHIP | New and Original | ||
| LND150N8/P024 | New and Original | ||
| LND150N8G | Small Signal Field-Effect Transistor, 0.03A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA |