 |  | | |
| PartNumber | LP0701N3-G | LP0701N3-G P002 | LP0701N3-G P003 |
| Description | MOSFET 16.5V 1.5Ohm | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET |
| Manufacturer | Microchip | Microchip Technology | Microchip Technology |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 16.5 V | - | - |
| Id Continuous Drain Current | 500 mA | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 5 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Bulk | Reel | Reel |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Type | MOSFET | - | - |
| Width | 4.19 mm | - | - |
| Brand | Microchip Technology | - | - |
| Forward Transconductance Min | 500 mS | - | - |
| Fall Time | 30 ns | 30 ns | 30 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | 30 ns | 30 ns |
| Typical Turn On Delay Time | 20 ns | 20 ns | 20 ns |
| Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
| Package Case | - | TO-92-3 | TO-92-3 |
| Pd Power Dissipation | - | 1 W | 1 W |
| Vgs Gate Source Voltage | - | 10 V | 10 V |
| Id Continuous Drain Current | - | - 500 mA | - 500 mA |
| Vds Drain Source Breakdown Voltage | - | - 16.5 V | - 16.5 V |
| Rds On Drain Source Resistance | - | 4 Ohms | 4 Ohms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip Technology |
LP0701N3-G | MOSFET 16.5V 1.5Ohm | |
| LP0701N3-G P014 | MOSFET P-CH Enhancmnt Mode MOSFET | ||
| LP0701N3-G P013 | MOSFET P-CH Enhancmnt Mode MOSFET | ||
| LP0701N3-G | MOSFET P-CH 16.5V 0.5A TO92-3 | ||
| LP0701N3-G P002 | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET | ||
| LP0701N3-G P003 | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET | ||
| LP0701N3-G P013 | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET | ||
| LP0701N3-G P014 | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET | ||
| LP0701N3-G P005 | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET |