MAG

MAGX-000035-010000 vs MAGX-000035-01000P vs MAGX-000025-150000

 
PartNumberMAGX-000035-010000MAGX-000035-01000PMAGX-000025-150000
DescriptionRF JFET Transistors .03-3.5GHz 10W CW Pin 25 dBm GaNRF JFET Transistors DC-3.5GHz Gain 14dB GaN SiCRF JFET Transistors 1-2500MHz Flanged GaN SiC
ManufacturerMACOMMACOMMACOM
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHEMTHEMTHEMT
TechnologyGaN SiCGaN SiCGaN SiC
Transistor PolarityN-ChannelN-ChannelN-Channel
Output Power10 W10 W170 W
PackagingTrayTrayTray
ProductRF JFET--
TypeGaN SiC HEMT--
BrandMACOM--
Product TypeRF JFET Transistors--
Factory Pack Quantity25--
SubcategoryTransistors--
Series-MAGX-
Mounting Style-SMD/SMTSMD/SMT
Operating Temperature Range-- 40 C to + 95 C- 40 C to + 95 C
Configuration-SingleCommon Source
Gain-14 dB18 dB
Pd Power Dissipation-12 W79 W
Maximum Operating Temperature-+ 95 C+ 95 C
Minimum Operating Temperature-- 40 C- 40 C
Operating Frequency-3.5 GHz1 MHz to 2.5 GHz
Id Continuous Drain Current-500 mA8.3 A
Vds Drain Source Breakdown Voltage-65 V50 V
Forward Transconductance Min-0.2 S2 S
Package Case--Flange Ceramic-4
Vgs th Gate Source Threshold Voltage--- 3.1 V
Vgs Gate Source Breakdown Voltage--- 8 V
  • Start with
  • MAG 247
Manufacturer Part # Description RFQ
MACOM
MACOM
MAGX-000035-010000 RF JFET Transistors .03-3.5GHz 10W CW Pin 25 dBm GaN
MAGX-000035-010000 RF JFET Transistors .03-3.5GHz 10W CW Pin 25 dBm GaN
MAGX-000035-01000P RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC
MAGX-000025-150000 RF JFET Transistors 1-2500MHz Flanged GaN SiC
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MAGNUM-AL-NON-130-13 Gripper, Zaytran, 2 finger, parallel, alum, 130N at 100PSI, 13mm stroke, non sync
MAGX-000035-01000TP RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC
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