PartNumber | MAGX-000035-010000 | MAGX-000035-01000P | MAGX-000025-150000 |
Description | RF JFET Transistors .03-3.5GHz 10W CW Pin 25 dBm GaN | RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC | RF JFET Transistors 1-2500MHz Flanged GaN SiC |
Manufacturer | MACOM | MACOM | MACOM |
Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Transistor Type | HEMT | HEMT | HEMT |
Technology | GaN SiC | GaN SiC | GaN SiC |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Output Power | 10 W | 10 W | 170 W |
Packaging | Tray | Tray | Tray |
Product | RF JFET | - | - |
Type | GaN SiC HEMT | - | - |
Brand | MACOM | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 25 | - | - |
Subcategory | Transistors | - | - |
Series | - | MAGX | - |
Mounting Style | - | SMD/SMT | SMD/SMT |
Operating Temperature Range | - | - 40 C to + 95 C | - 40 C to + 95 C |
Configuration | - | Single | Common Source |
Gain | - | 14 dB | 18 dB |
Pd Power Dissipation | - | 12 W | 79 W |
Maximum Operating Temperature | - | + 95 C | + 95 C |
Minimum Operating Temperature | - | - 40 C | - 40 C |
Operating Frequency | - | 3.5 GHz | 1 MHz to 2.5 GHz |
Id Continuous Drain Current | - | 500 mA | 8.3 A |
Vds Drain Source Breakdown Voltage | - | 65 V | 50 V |
Forward Transconductance Min | - | 0.2 S | 2 S |
Package Case | - | - | Flange Ceramic-4 |
Vgs th Gate Source Threshold Voltage | - | - | - 3.1 V |
Vgs Gate Source Breakdown Voltage | - | - | - 8 V |