MAGX-002 stock, MAGX-002, MAGX-002731-100L00


PartNumber	MAGX-002731-100L00	MAGX-002731-180L00	MAGX-002731-030L00
Description	RF JFET Transistors 2.7-3.1GHz 50Volt 100W Pk Gain 12dB	RF JFET Transistors 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB	TRANSISTOR GAN 30WPK 2.7-3.1GHZ
Manufacturer	MACOM	MACOM	-
Product Category	RF JFET Transistors	RF JFET Transistors	-
RoHS	Y	Y	-
Transistor Type	HEMT	HEMT	-
Technology	GaN SiC	GaN SiC	-
Gain	12.6 dB	11.5 dB	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	175 V	175 V	-
Vgs Gate Source Breakdown Voltage	- 8 V	- 8 V	-
Id Continuous Drain Current	7.1 A	10 A	-
Output Power	100 W	180 W	-
Minimum Operating Temperature	- 40 C	- 40 C	-
Maximum Operating Temperature	+ 95 C	+ 95 C	-
Pd Power Dissipation	128 W	192 W	-
Mounting Style	SMD/SMT	SMD/SMT	-
Packaging	Tray	Tray	-
Configuration	Common Source	Common Source	-
Operating Frequency	2.7 GHz to 3.1 GHz	2.7 GHz to 3.1 GHz	-
Operating Temperature Range	- 40 C to + 95 C	- 40 C to + 95 C	-
Product	RF JFET	RF JFET	-
Type	GaN SiC HEMT	GaN SiC HEMT	-
Brand	MACOM	MACOM	-
Forward Transconductance Min	2.5 S	5 S	-
Product Type	RF JFET Transistors	RF JFET Transistors	-
Factory Pack Quantity	25	25	-
Subcategory	Transistors	Transistors	-
Vgs th Gate Source Threshold Voltage	- 3 V	- 3 V	-

Search Part Number : "MAGX-002", Match & Start with "MAGX-002" - Total : 5

Manufacturer	Part #	Description
MACOM	MAGX-002731-100L00	RF JFET Transistors 2.7-3.1GHz 50Volt 100W Pk Gain 12dB
	MAGX-002731-180L00	RF JFET Transistors 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB
	MAGX-002731-030L00	TRANSISTOR GAN 30WPK 2.7-3.1GHZ
	MAGX-002731-180L00	RF JFET Transistors 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB
	MAGX-002731-100L00	RF JFET Transistors 2.7-3.1GHz 50Volt 100W Pk Gain 12dB

MAGX-002