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| PartNumber | MBC13900NT1 | MBC13900 | MBC13900T1 , BGD804N |
| Description | RF Bipolar Transistors DISCRETE BJT PB FREE | ||
| Manufacturer | NXP | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 100 at 5 mA at 2 V | - | - |
| Collector Emitter Voltage VCEO Max | 6.5 V | - | - |
| Emitter Base Voltage VEBO | 3 V | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | - | - |
| Collector Base Voltage VCBO | 8 V | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Width | 1.25 mm | - | - |
| Brand | NXP / Freescale | - | - |
| Gain Bandwidth Product fT | 15000 MHz | - | - |
| Maximum DC Collector Current | 0.02 A | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Subcategory | Transistors | - | - |