MBT3946DW1T2

MBT3946DW1T2G vs MBT3946DW1T2 vs MBT3946DW1T2G (ALM ONLY)

 
PartNumberMBT3946DW1T2GMBT3946DW1T2MBT3946DW1T2G (ALM ONLY)
DescriptionBipolar Transistors - BJT 200mA 40V Dual ComplementaryBipolar Transistors - BJT 200mA 40V Dual
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-6--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO40 V, 60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage- 0.4 V, 0.3 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT250 MHz, 300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMBT3946DW1T1--
Height0.9 mm--
Length2 mm--
PackagingReel--
Width1.25 mm--
BrandON Semiconductor--
Continuous Collector Current0.2 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesMBT3946DW1T1G--
Unit Weight0.000988 oz--
Manufacturer Part # Description RFQ
MBT3946DW1T2G Bipolar Transistors - BJT 200mA 40V Dual Complementary
MBT3946DW1T2 Bipolar Transistors - BJT 200mA 40V Dual
MBT3946DW1T2G (ALM ONLY) New and Original
ON Semiconductor
ON Semiconductor
MBT3946DW1T2G Bipolar Transistors - BJT 200mA 40V Dual Complementary
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