PartNumber | MIEB101H1200EH | MIEB100W1200TEH | MIEB100W1200DPFTEH |
Description | IGBT Modules IGBT Module H Bridge | IGBT Modules Six Pack SPT IGBT | |
Manufacturer | IXYS | IXYS | - |
Product Category | IGBT Modules | IGBT Modules | - |
Configuration | Half Bridge | Six-Pack | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
Collector Emitter Saturation Voltage | 1.8 V | 1.8 V | - |
Continuous Collector Current at 25 C | 183 A | 183 A | - |
Gate Emitter Leakage Current | 200 nA | 200 nA | - |
Pd Power Dissipation | 630 W | 630 W | - |
Package / Case | E3-Pack | E3-Pack | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Packaging | Bulk | Bulk | - |
Series | MIEB101H1200EH | MIEB100W1200TEH | - |
Brand | IXYS | IXYS | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 5 | 5 | - |
Subcategory | IGBTs | IGBTs | - |