MJ11015

MJ11015G vs MJ11015 vs MJ11015G,MJ11015

 
PartNumberMJ11015GMJ11015MJ11015G,MJ11015
DescriptionDarlington Transistors 30A 120V Bipolar Power PNPBIPOLAR TRANSISTOR, PNP, -120V TO-3, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:120V, Transition Frequency ft:4MHz, Power Dissipation Pd:200W, DC Collector Current:30A, DC Curre
ManufacturerON SemiconductorON-
Product CategoryDarlington TransistorsTransistors (BJT) - Single-
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Collector Emitter Voltage VCEO Max120 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO120 V--
Maximum DC Collector Current30 A--
Pd Power Dissipation200 W--
Mounting StyleThrough Hole--
Package / CaseTO-204-2 (TO-3)--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJ11015--
PackagingTray--
Height8.51 mm--
Length39.37 mm--
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current30 A--
DC Collector/Base Gain hfe Min1000--
Product TypeDarlington Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.415986 oz--
Manufacturer Part # Description RFQ
MJ11015G Darlington Transistors 30A 120V Bipolar Power PNP
MJ11015 BIPOLAR TRANSISTOR, PNP, -120V TO-3, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:120V, Transition Frequency ft:4MHz, Power Dissipation Pd:200W, DC Collector Current:30A, DC Curre
MJ11015G,MJ11015 New and Original
MJ11015G,MJ11016G New and Original
MJ11015G,MJ11016G,MJ2955 New and Original
ON Semiconductor
ON Semiconductor
MJ11015G Darlington Transistors 30A 120V Bipolar Power PNP
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