MJ11016G

MJ11016G vs MJ11016G,MJ11015G vs MJ11016G-ON

 
PartNumberMJ11016GMJ11016G,MJ11015GMJ11016G-ON
DescriptionDarlington Transistors 30A 120V Bipolar Power NPN
ManufacturerON Semiconductor--
Product CategoryDarlington Transistors--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max120 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO120 V--
Maximum DC Collector Current30 A--
Pd Power Dissipation200 W--
Mounting StyleThrough Hole--
Package / CaseTO-204-2 (TO-3)--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJ11016--
PackagingTray--
Height8.51 mm--
Length39.37 mm--
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current30 A--
DC Collector/Base Gain hfe Min200, 1000--
Product TypeDarlington Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.415986 oz--
Manufacturer Part # Description RFQ
MJ11016G Darlington Transistors 30A 120V Bipolar Power NPN
MJ11016G,MJ11015G New and Original
MJ11016G-ON New and Original
MJ11016G/J11015G New and Original
ON Semiconductor
ON Semiconductor
MJ11016G Darlington Transistors 30A 120V Bipolar Power NPN
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