MJB42CT

MJB42CT4G vs MJB42CT4 vs MJB42CTG

 
PartNumberMJB42CT4GMJB42CT4MJB42CTG
DescriptionBipolar Transistors - BJT 6A 100V 65W PNP
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.5 V1.5 V-
Maximum DC Collector Current6 A6 A-
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJB42CMJB42C-
Height4.83 mm--
Length10.29 mm--
PackagingReelReel-
Width9.65 mm--
BrandON Semiconductor--
Continuous Collector Current6 A6 A-
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation65 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity800--
SubcategoryTransistors--
Unit Weight0.424663 oz--
Package Case-TO-263-3 (D2PAK)-
Pd Power Dissipation-65 W-
Collector Emitter Voltage VCEO Max-100 V-
Collector Base Voltage VCBO-100 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-30-
Manufacturer Part # Description RFQ
MJB42CT4G Bipolar Transistors - BJT 6A 100V 65W PNP
MJB42CT4 New and Original
MJB42CTG New and Original
ON Semiconductor
ON Semiconductor
MJB42CT4G Bipolar Transistors - BJT 6A 100V 65W PNP
Top