PartNumber | MJD112-1G | MJD112-1 | MJD112-1G/MJD117 |
Description | Darlington Transistors 2A 100V Bipolar Power NPN | Power Bipolar Transistor, 2A I(C),100VV(BR)CEO,1-Element, NPN, Silicon,Plastic/Epoxy, 3Pin | |
Manufacturer | ON Semiconductor | MOTOLORA | ON/FAI |
Product Category | Darlington Transistors | Transistors (BJT) - Single | IC Chips |
RoHS | Y | - | - |
Configuration | Single | - | - |
Transistor Polarity | NPN | - | - |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Base Voltage VCBO | 100 V | - | - |
Maximum DC Collector Current | 2 A | - | - |
Maximum Collector Cut off Current | 20 uA | - | - |
Pd Power Dissipation | 20 W | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 (DPAK) | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | MJD112 | - | - |
Packaging | Tube | - | - |
Height | 6.22 mm | - | - |
Length | 6.73 mm | - | - |
Width | 2.38 mm | - | - |
Brand | ON Semiconductor | - | - |
Continuous Collector Current | 2 A | - | - |
DC Collector/Base Gain hfe Min | 200, 500, 1000 | - | - |
Product Type | Darlington Transistors | - | - |
Factory Pack Quantity | 75 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.001411 oz | - | - |