MJD112T

MJD112T4G vs MJD112T4G J112 vs MJD112T4-CUT TAPE

 
PartNumberMJD112T4GMJD112T4G J112MJD112T4-CUT TAPE
DescriptionDarlington Transistors 2A 100V Bipolar Power NPN
ManufacturerON Semiconductor--
Product CategoryDarlington Transistors--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Collector Emitter Voltage VCEO Max100 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO100 V--
Maximum DC Collector Current2 A--
Maximum Collector Cut off Current20 uA--
Pd Power Dissipation20 W--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3 (DPAK)--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD112--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min200, 500, 1000--
Product TypeDarlington Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.016579 oz--
Manufacturer Part # Description RFQ
MJD112T4G Darlington Transistors 2A 100V Bipolar Power NPN
MJD112T4G J112 New and Original
MJD112T4G/MJD117T4G New and Original
MJD112T4G/TO-251 New and Original
MJD112T4-CUT TAPE New and Original
MJD112T4G-CUT TAPE New and Original
MJD112TF-CUT TAPE New and Original
STMicroelectronics
STMicroelectronics
MJD112T4 Darlington Transistors NPN Power Darlington
MJD112T4 Darlington Transistors NPN Power Darlington
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
MJD112TF Darlington Transistors NPN Si Transistor Darlington
ON Semiconductor
ON Semiconductor
MJD112TF TRANS NPN DARL 100V 2A DPAK
MJD112T4G Darlington Transistors 2A 100V Bipolar Power NPN
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