PartNumber | MJD210G | MJD210-1 | MJD210-TF |
Description | Bipolar Transistors - BJT 5A 25V 12.5W PNP | ||
Manufacturer | ON Semiconductor | - | SAMSUNG |
Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 25 V | - | - |
Collector Base Voltage VCBO | 40 V | - | - |
Emitter Base Voltage VEBO | 8 V | - | - |
Collector Emitter Saturation Voltage | 1.8 V | - | - |
Maximum DC Collector Current | 5 A | - | - |
Gain Bandwidth Product fT | 65 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | MJD210 | - | - |
Height | 2.38 mm | - | - |
Length | 6.73 mm | - | - |
Packaging | Tube | - | - |
Width | 6.22 mm | - | - |
Brand | ON Semiconductor | - | - |
Continuous Collector Current | 5 A | - | - |
DC Collector/Base Gain hfe Min | 70 | - | - |
Pd Power Dissipation | 12.5 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 75 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.016014 oz | - | - |