PartNumber | MJD31C-13 | MJD31CG | MJD31C1G |
Description | Bipolar Transistors - BJT 100V 5A NPN SMT | Bipolar Transistors - BJT 3A 100V 15W NPN | Bipolar Transistors - BJT 3A 100V 15W NPN |
Manufacturer | Diodes Incorporated | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | DPAK-3 | TO-252-3 | IPAK-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 100 V | 100 V | 100 V |
Collector Base Voltage VCBO | 100 V | 100 V | 100 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 1.2 V | 1.2 V | 1.2 V |
Maximum DC Collector Current | 3 A | 3 A | 3 A |
Gain Bandwidth Product fT | 3 MHz | 3 MHz | 3 MHz |
Minimum Operating Temperature | - 55 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | MJD31C | MJD31C | MJD31C |
DC Current Gain hFE Max | 40 at 3 A, 4 V | - | - |
Height | 2.4 mm | 2.38 mm | 2.38 mm |
Length | 6.8 mm | 6.73 mm | 6.73 mm |
Packaging | Reel | Tube | Tube |
Width | 6.2 mm | 6.22 mm | 6.22 mm |
Brand | Diodes Incorporated | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 3 A | 3 A | 3 A |
DC Collector/Base Gain hfe Min | 25 | 25 | 25 |
Pd Power Dissipation | 1560 mW | 1.56 W | 1.56 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 75 | 75 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.012346 oz | 0.014110 oz | 0.139332 oz |