PartNumber | MJD32CQ-13 | MJD32C-13 | MJD32C |
Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor | Bipolar Transistors - BJT 100V 3A PNP SMT | Bipolar Transistors - BJT 3A 100V 15W PNP |
Manufacturer | Diodes Incorporated | Diodes Incorporated | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Technology | Si | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 100 V | 100 V | 100 V |
Collector Base Voltage VCBO | - 100 V | 100 V | 100 V |
Emitter Base Voltage VEBO | - 6 V | 6 V | 5 V |
Collector Emitter Saturation Voltage | - 1.2 V | 1.2 V | 1.2 V |
Maximum DC Collector Current | - 3 A | 3 A | 3 A |
Gain Bandwidth Product fT | 3 MHz | 3 MHz | 3 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 50 | - | - |
Packaging | Reel | Reel | Tube |
Brand | Diodes Incorporated | Diodes Incorporated | ON Semiconductor / Fairchild |
Continuous Collector Current | - 3 A | - | 3 A |
DC Collector/Base Gain hfe Min | 10 | - | 25 |
Pd Power Dissipation | 15 W | 1560 mW | 1.56 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 2500 | 2500 | 75 |
Subcategory | Transistors | Transistors | Transistors |
RoHS | - | Y | N |
Series | - | MJD32C | MJD32C |
Height | - | 2.4 mm | 2.38 mm |
Length | - | 6.8 mm | 6.73 mm |
Width | - | 6.2 mm | 6.22 mm |