PartNumber | MJD44H11 | MJD44H11-001G | MJD44H11-1 |
Description | Bipolar Transistors - BJT 8A 80V 20W NPN | Bipolar Junction Transistor, NPN Type, TO-251 | |
Manufacturer | ONS | ON | ON |
Product Category | Transistors (BJT) - Single | IC Chips | Transistors (BJT) - Single |
Series | - | - | MJD44H11 |
Packaging | - | - | Tube |
Unit Weight | - | - | 0.012346 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | DPAK-3 |
Configuration | - | - | Single |
Pd Power Dissipation | - | - | 20 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Collector Emitter Voltage VCEO Max | - | - | 80 V |
Transistor Polarity | - | - | NPN |
Collector Emitter Saturation Voltage | - | - | 1 V |
Collector Base Voltage VCBO | - | - | 5 V |
Emitter Base Voltage VEBO | - | - | 5 V |
Maximum DC Collector Current | - | - | 8 A |
Gain Bandwidth Product fT | - | - | 85 MHz |
Continuous Collector Current | - | - | 8 A |
DC Collector Base Gain hfe Min | - | - | 60 |