PartNumber | MJD44H11-1G | MJD44H11-1 | MJD44H11-1G/MJD45H11-1G |
Description | Bipolar Transistors - BJT 8A 80V 20W NPN | Bipolar Junction Transistor, NPN Type, TO-251 | |
Manufacturer | ON Semiconductor | ON | - |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | DPAK-3 | - | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 80 V | - | - |
Collector Base Voltage VCBO | 5 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 1 V | 1 V | - |
Maximum DC Collector Current | 8 A | 8 A | - |
Gain Bandwidth Product fT | 85 MHz | 85 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | MJD44H11 | MJD44H11 | - |
Height | 6.35 mm | - | - |
Length | 6.73 mm | - | - |
Packaging | Tube | Tube | - |
Width | 2.38 mm | - | - |
Brand | ON Semiconductor | - | - |
Continuous Collector Current | 8 A | 8 A | - |
DC Collector/Base Gain hfe Min | 60 | - | - |
Pd Power Dissipation | 20 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 75 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.012346 oz | 0.012346 oz | - |
Package Case | - | DPAK-3 | - |
Pd Power Dissipation | - | 20 W | - |
Collector Emitter Voltage VCEO Max | - | 80 V | - |
Collector Base Voltage VCBO | - | 5 V | - |
Emitter Base Voltage VEBO | - | 5 V | - |
DC Collector Base Gain hfe Min | - | 60 | - |