PartNumber | MJE13009 | MJE13009G |
Description | Bipolar Transistors - BJT 12A 400V 100W NPN | Bipolar Transistors - BJT 12A 400V 100W NPN |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 400 V | 400 V |
Collector Base Voltage VCBO | 700 V | 700 V |
Emitter Base Voltage VEBO | 9 V | 9 V |
Collector Emitter Saturation Voltage | 1 V | 1 V |
Maximum DC Collector Current | 12 A | 12 A |
Gain Bandwidth Product fT | 4 MHz | 4 MHz |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Height | 9.28 mm (Max) | 9.28 mm (Max) |
Length | 10.28 mm (Max) | 10.28 mm (Max) |
Packaging | Tube | Tube |
Width | 4.82 mm (Max) | 4.82 mm (Max) |
Brand | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | 12 A | 12 A |
DC Collector/Base Gain hfe Min | 8 | 8 |
Pd Power Dissipation | 12 W | 12 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 50 | 50 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.211644 oz | 0.211644 oz |
DC Current Gain hFE Max | - | 40 |