PartNumber | MJE5731AG | MJE5730G | MJE5731G |
Description | Bipolar Transistors - BJT BIP PNP 1A 375V | Bipolar Transistors - BJT 1A 300V 40W PNP | Bipolar Transistors - BJT 1A 350V 40W PNP |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 375 V | 300 V | 350 V |
Collector Base Voltage VCBO | 350 V | 300 V | 350 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Maximum DC Collector Current | 1 A | 1 A | 1 A |
Gain Bandwidth Product fT | 10 MHz | 10 MHz | 10 MHz |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | MJE5731A | MJE5730 | MJE5731 |
Height | 15.75 mm | 15.75 mm | 15.75 mm |
Length | 10.53 mm | 10.53 mm | 10.53 mm |
Packaging | Tube | Tube | Tube |
Width | 4.83 mm | 4.83 mm | 4.83 mm |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
DC Collector/Base Gain hfe Min | 30 | 30 | 30 |
Pd Power Dissipation | 40000 mW | 40 W | 40 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Collector Emitter Saturation Voltage | - | 1 V | 1 V |
Continuous Collector Current | - | 1 A | 1 A |