MJF45H11

MJF45H11G vs MJF45H11 vs MJF45H11G.

 
PartNumberMJF45H11GMJF45H11MJF45H11G.
DescriptionBipolar Transistors - BJT 10A 80V 50W PNPTRANS PNP 80V 10A TO-220FPTransistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-80V, Transition Frequency ft:40MHz, Power Dissipation Pd:36W, DC Collector Current:-10A, DC Current Gain hFE:40hFE, No. of Pins:3Pins
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO5 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT40 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJF45H11--
Height9.24 mm--
Length10.63 mm--
PackagingTube--
Width4.9 mm--
BrandON Semiconductor--
Continuous Collector Current10 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation36 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.081130 oz--
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
MJF45H11G Bipolar Transistors - BJT 10A 80V 50W PNP
MJF45H11 TRANS PNP 80V 10A TO-220FP
MJF45H11G Bipolar Transistors - BJT 10A 80V 50W PNP
MJF45H11G. Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-80V, Transition Frequency ft:40MHz, Power Dissipation Pd:36W, DC Collector Current:-10A, DC Current Gain hFE:40hFE, No. of Pins:3Pins
MJF45H11G/MJF44H11G New and Original
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