MJL1302AG

MJL1302AG vs MJL1302AG/MJL3281A vs MJL1302AG/MJL3281AG

 
PartNumberMJL1302AGMJL1302AG/MJL3281AMJL1302AG/MJL3281AG
DescriptionBipolar Transistors - BJT 15A 230V 200W PNP
ManufacturerON SemiconductorONON
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3--
Transistor PolarityPNPNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max200 V--
Collector Base Voltage VCBO230 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage3 V3 V3 V
Maximum DC Collector Current15 A15 A15 A
Gain Bandwidth Product fT30 MHz30 MHz30 MHz
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesMJL1302AMJL3281AMJL3281A
Height26.4 mm--
Length20.3 mm--
PackagingTubeTubeTube
Width5.3 mm--
BrandON Semiconductor--
Continuous Collector Current15 A15 A15 A
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity25--
SubcategoryTransistors--
Unit Weight0.352740 oz--
Package Case-TO-264-3, TO-264AATO-264-3, TO-264AA
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-264TO-264
Power Max-200W200W
Transistor Type-NPNNPN
Current Collector Ic Max-15A15A
Voltage Collector Emitter Breakdown Max-260V260V
DC Current Gain hFE Min Ic Vce-75 @ 5A, 5V75 @ 5A, 5V
Vce Saturation Max Ib Ic-3V @ 1A, 10A3V @ 1A, 10A
Current Collector Cutoff Max-50μA (ICBO)50μA (ICBO)
Frequency Transition-30MHz30MHz
Pd Power Dissipation-200 W200 W
Collector Emitter Voltage VCEO Max-200 V200 V
Collector Base Voltage VCBO-230 V230 V
Emitter Base Voltage VEBO-7 V7 V
DC Collector Base Gain hfe Min-6060
Manufacturer Part # Description RFQ
MJL1302AG Bipolar Transistors - BJT 15A 230V 200W PNP
MJL1302AG/MJL3281A New and Original
MJL1302AG/MJL3281AG New and Original
ON Semiconductor
ON Semiconductor
MJL1302AG Bipolar Transistors - BJT 15A 230V 200W PNP
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