MJW1302

MJW1302AG vs MJW1302A vs MJW1302A/MJW3281A

 
PartNumberMJW1302AGMJW1302AMJW1302A/MJW3281A
DescriptionBipolar Transistors - BJT 15A 250V 200W PNPTRANS PNP 230V 15A TO247
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max230 V--
Collector Base Voltage VCBO230 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.4 V0.4 V-
Maximum DC Collector Current15 A15 A-
Gain Bandwidth Product fT30 MHz30 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJW1302AMJW1302A-
Height21.08 mm--
Length16.26 mm--
PackagingTubeTube-
Width5.3 mm--
BrandON Semiconductor--
Continuous Collector Current15 A15 A-
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity30--
SubcategoryTransistors--
Unit Weight1.340411 oz1.340411 oz-
Package Case-TO-247-3-
Mounting Type-Through Hole-
Supplier Device Package-TO-247-
Power Max-200W-
Transistor Type-PNP-
Current Collector Ic Max-15A-
Voltage Collector Emitter Breakdown Max-230V-
DC Current Gain hFE Min Ic Vce-50 @ 7A, 5V-
Vce Saturation Max Ib Ic-2V @ 1A, 10A-
Current Collector Cutoff Max-50μA (ICBO)-
Frequency Transition-30MHz-
Pd Power Dissipation-200 W-
Collector Emitter Voltage VCEO Max-230 V-
Collector Base Voltage VCBO-230 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-50-
Manufacturer Part # Description RFQ
MJW1302AG Bipolar Transistors - BJT 15A 250V 200W PNP
MJW1302A/MJW3281A New and Original
MJW1302G New and Original
ON Semiconductor
ON Semiconductor
MJW1302A TRANS PNP 230V 15A TO247
MJW1302AG Bipolar Transistors - BJT 15A 250V 200W PNP
Top