 | |  | |
| PartNumber | MJW21196G | MJW21196 | MJW21196/MJW21195 |
| Description | Bipolar Transistors - BJT 16A 250V 200W NPN | Bipolar Transistors - BJT 16A 250V 200W NPN | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Transistor Polarity | NPN | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 250 V | 250 V | - |
| Collector Base Voltage VCBO | 400 V | 400 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 1 V | 1 V | - |
| Maximum DC Collector Current | 16 A | 16 A | - |
| Gain Bandwidth Product fT | 4 MHz | 4 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MJW21196 | - | - |
| Height | 21.08 mm | 21.08 mm (Max) | - |
| Length | 16.26 mm | 16.26 mm (Max) | - |
| Packaging | Tube | Tube | - |
| Width | 5.3 mm | 5.3 mm (Max) | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 16 A | 16 A | - |
| DC Collector/Base Gain hfe Min | 20 | 20 | - |
| Pd Power Dissipation | 200 W | 200 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| MJW21196G | Bipolar Transistors - BJT 16A 250V 200W NPN | ||
| MJW21196/MJW21195 | New and Original | ||
| MJW21196G/MJW21195G | New and Original | ||
ON Semiconductor |
MJW21196 | Bipolar Transistors - BJT 16A 250V 200W NPN | |
| MJW21196 | TRANS NPN 250V 16A TO247 | ||
| MJW21196G | Bipolar Transistors - BJT 16A 250V 200W NPN |