MMBT3906F

MMBT3906FA-7B vs MMBT3906FA-7 vs MMBT3906FN3

 
PartNumberMMBT3906FA-7BMMBT3906FA-7MMBT3906FN3
DescriptionBipolar Transistors - BJT 40V PNP SM Trans 435mW -40V Vceo
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseX2-DFN0806-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 0.25 V- 0.25 V-
Maximum DC Collector Current- 500 mA- 500 mA-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT39MMBT39-
PackagingReelReel-
BrandDiodes Incorporated--
Pd Power Dissipation435 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity10000--
SubcategoryTransistors--
Package Case-X2-DFN0806-3-
Pd Power Dissipation-435 mW-
Collector Emitter Voltage VCEO Max-- 40 V-
Collector Base Voltage VCBO-- 40 V-
Emitter Base Voltage VEBO-- 6 V-
DC Collector Base Gain hfe Min-100 at - 10 mA at -1 V-
DC Current Gain hFE Max-300 at - 10 mA at - 1 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
MMBT3906FZ-7B Bipolar Transistors - BJT PNP 40Vceo 0.3W 250mW 250MHz
MMBT3906FA-7B Bipolar Transistors - BJT 40V PNP SM Trans 435mW -40V Vceo
MMBT3906FA-7 New and Original
MMBT3906FN3 New and Original
MMBT3906FA-7B Bipolar Transistors - BJT 40V PNP SM Trans 435mW -40V Vceo
MMBT3906FZ-7B Bipolar Transistors - BJT PNP 40Vceo 0.3W 250mW 250MHz
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