MMBT4401LT1G

MMBT4401LT1G vs MMBT4401LT1G 2X vs MMBT4401LT1G(2X)

 
PartNumberMMBT4401LT1GMMBT4401LT1G 2XMMBT4401LT1G(2X)
DescriptionBipolar Transistors - BJT 600mA 60V NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.75 V--
Maximum DC Collector Current0.6 A--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT4401L--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current0.6 A--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.001058 oz--
Manufacturer Part # Description RFQ
MMBT4401LT1G Bipolar Transistors - BJT 600mA 60V NPN
MMBT4401LT1G 2X New and Original
MMBT4401LT1G(2X) New and Original
MMBT4401LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
MMBT4401LT1G Bipolar Transistors - BJT 600mA 60V NPN
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