MMBT4403T

MMBT4403T-7-F vs MMBT4403T-7 vs MMBT4403T-7-F , BZX85C3V

 
PartNumberMMBT4403T-7-FMMBT4403T-7MMBT4403T-7-F , BZX85C3V
DescriptionBipolar Transistors - BJT -40V 150mWTRANS PNP 40V 0.6A SOT-523
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-523-3SOT-523-
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.75 V--
Maximum DC Collector Current0.6 A--
Gain Bandwidth Product fT200 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT44--
DC Current Gain hFE Max300--
Height0.75 mm--
Length1.6 mm--
PackagingReelCut Tape (CT)-
Width0.8 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 0.6 A--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000071 oz--
Part Status-Discontinued at Digi-Key-
Transistor Type-PNP-
Current Collector (Ic) (Max)-600mA-
Voltage Collector Emitter Breakdown (Max)-40V-
Vce Saturation (Max) @ Ib, Ic-750mV @ 50mA, 500mA-
Current Collector Cutoff (Max)---
DC Current Gain (hFE) (Min) @ Ic, Vce-100 @ 150mA, 2V-
Power Max-150mW-
Frequency Transition-200MHz-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-523-
Base Part Number-MMBT4403-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
MMBT4403T-7-F Bipolar Transistors - BJT -40V 150mW
MMBT4403TR New and Original
MMBT4403T-7 TRANS PNP 40V 0.6A SOT-523
MMBT4403T-7-F , BZX85C3V New and Original
MMBT4403T/R New and Original
MMBT4403TABNS63 New and Original
MMBT4403T1 Bipolar Junction Transistor, PNP Type, TO-236AB
MMBT4403T-7-F Bipolar Transistors - BJT -40V 150mW
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