MMBT5088L

MMBT5088LT1G vs MMBT5088L vs MMBT5088LT1

 
PartNumberMMBT5088LT1GMMBT5088LMMBT5088LT1
DescriptionBipolar Transistors - BJT 50mA 35V NPNTRANS NPN 30V 0.05A SOT23
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO35 V--
Emitter Base Voltage VEBO4.5 V--
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current0.05 A0.05 A-
Gain Bandwidth Product fT50 MHz50 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT5088LMMBT5088L-
Height0.94 mm--
Length2.9 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current0.05 A0.05 A-
DC Collector/Base Gain hfe Min300--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.050717 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3 (TO-236)-
Power Max-300mW-
Transistor Type-NPN-
Current Collector Ic Max-50mA-
Voltage Collector Emitter Breakdown Max-30V-
DC Current Gain hFE Min Ic Vce-300 @ 100μA, 5V-
Vce Saturation Max Ib Ic-500mV @ 1mA, 10mA-
Current Collector Cutoff Max-50nA (ICBO)-
Frequency Transition-50MHz-
Pd Power Dissipation-225 mW-
Collector Emitter Voltage VCEO Max-30 V-
Collector Base Voltage VCBO-35 V-
Emitter Base Voltage VEBO-4.5 V-
DC Collector Base Gain hfe Min-300-
Manufacturer Part # Description RFQ
MMBT5088LT1G Bipolar Transistors - BJT 50mA 35V NPN
MMBT5088L New and Original
MMBT5088LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
MMBT5088LT1 TRANS NPN 30V 0.05A SOT23
MMBT5088LT1G Bipolar Transistors - BJT 50mA 35V NPN
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