MMBT5401LT1G

MMBT5401LT1G vs MMBT5401LT1G , MAX6314US vs MMBT5401LT1G(2L)

 
PartNumberMMBT5401LT1GMMBT5401LT1G , MAX6314USMMBT5401LT1G(2L)
DescriptionBipolar Transistors - BJT SS HV XSTR PNP 150V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 150 V--
Collector Base Voltage VCBO- 160 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.5 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT5401L--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current- 500 mA--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
MMBT5401LT1G Bipolar Transistors - BJT SS HV XSTR PNP 150V
MMBT5401LT1G , MAX6314US New and Original
MMBT5401LT1G(2L) New and Original
MMBT5401LT1G/2L New and Original
MMBT5401LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
MMBT5401LT1G Bipolar Transistors - BJT SS HV XSTR PNP 150V
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