PartNumber | MMBT5550LT1G | MMBT5550LT1 | MMBT5550LT1G-CUT TAPE |
Description | Bipolar Transistors - BJT SS HV XSTR NPN 160V | Bipolar Transistors - BJT 600mA 160V NPN | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | N | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 140 V | 140 V | - |
Collector Base Voltage VCBO | 180 V | 180 V | - |
Emitter Base Voltage VEBO | 6 V | 6 V | - |
Collector Emitter Saturation Voltage | 0.15 V | 0.15 V | - |
Maximum DC Collector Current | 600 mA | 600 mA | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | MMBT5550L | - | - |
Height | 0.94 mm | 0.94 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Packaging | Reel | Reel | - |
Width | 1.3 mm | 1.3 mm | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Continuous Collector Current | 600 mA | 600 mA | - |
DC Collector/Base Gain hfe Min | 60 | 60 | - |
Pd Power Dissipation | 225 mW | 225 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.000282 oz | 0.000282 oz | - |