MMBT5550LT1

MMBT5550LT1G vs MMBT5550LT1 vs MMBT5550LT1G-CUT TAPE

 
PartNumberMMBT5550LT1GMMBT5550LT1MMBT5550LT1G-CUT TAPE
DescriptionBipolar Transistors - BJT SS HV XSTR NPN 160VBipolar Transistors - BJT 600mA 160V NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max140 V140 V-
Collector Base Voltage VCBO180 V180 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage0.15 V0.15 V-
Maximum DC Collector Current600 mA600 mA-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT5550L--
Height0.94 mm0.94 mm-
Length2.9 mm2.9 mm-
PackagingReelReel-
Width1.3 mm1.3 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current600 mA600 mA-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation225 mW225 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz-
Manufacturer Part # Description RFQ
MMBT5550LT1G Bipolar Transistors - BJT SS HV XSTR NPN 160V
MMBT5550LT1G/M1F New and Original
MMBT5550LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
MMBT5550LT1 Bipolar Transistors - BJT 600mA 160V NPN
MMBT5550LT1 TRANS NPN 140V 0.6A SOT23
MMBT5550LT1G Bipolar Transistors - BJT SS HV XSTR NPN 160V
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