 | |  | |
| PartNumber | MMBT6517LT1G | MMBT6517LT3G | MMBT6517LT3 |
| Description | Bipolar Transistors - BJT 500mA 350V NPN | Bipolar Transistors - BJT 500mA 350V NPN | TRANS NPN 350V 0.1A SOT-23 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 350 V | 350 V | - |
| Collector Base Voltage VCBO | 350 V | 350 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 1 V | 1 V | - |
| Maximum DC Collector Current | 0.5 A | 0.5 A | - |
| Gain Bandwidth Product fT | 200 MHz | 200 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MMBT6517L | MMBT6517L | - |
| Height | 0.94 mm | 0.94 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Packaging | Reel | Reel | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 0.5 A | 0.5 A | - |
| DC Collector/Base Gain hfe Min | 20 | 20 | - |
| Pd Power Dissipation | 225 mW | 225 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
MMBT6517LT1G | Bipolar Transistors - BJT 500mA 350V NPN | |
| MMBT6517LT3G | Bipolar Transistors - BJT 500mA 350V NPN | ||
| MMBT6517LT3 | TRANS NPN 350V 0.1A SOT-23 | ||
| MMBT6517LT3G | Bipolar Transistors - BJT 500mA 350V NPN | ||
| MMBT6517LT1G | Bipolar Transistors - BJT 500mA 350V NPN | ||
| MMBT6517LT1 | Bipolar Transistors - BJT 500mA 350V NPN |