MMBTA05-7

MMBTA05-7-F vs MMBTA05-7 vs MMBTA05-7-F , BZX99-C13

 
PartNumberMMBTA05-7-FMMBTA05-7MMBTA05-7-F , BZX99-C13
DescriptionBipolar Transistors - BJT 60V 300mWTRANS NPN 60V 0.5A SOT23-3
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.25 V0.25 V-
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBTA05MMBTA05-
Height1 mm--
Length3.05 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.4 mm--
BrandDiodes Incorporated--
Continuous Collector Current0.5 A0.5 A-
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.000282 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
Power Max-300mW-
Transistor Type-NPN-
Current Collector Ic Max-500mA-
Voltage Collector Emitter Breakdown Max-60V-
DC Current Gain hFE Min Ic Vce-100 @ 100mA, 1V-
Vce Saturation Max Ib Ic-250mV @ 10mA, 100mA-
Current Collector Cutoff Max-100nA-
Frequency Transition-100MHz-
Pd Power Dissipation-300 mW-
Collector Emitter Voltage VCEO Max-60 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-4 V-
DC Collector Base Gain hfe Min-100-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
MMBTA05-7-F Bipolar Transistors - BJT 60V 300mW
MMBTA05-7 TRANS NPN 60V 0.5A SOT23-3
MMBTA05-7-F , BZX99-C13 New and Original
MMBTA05-7-F/C1G New and Original
MMBTA05-7-FDIODES New and Original
MMBTA05-7-F Bipolar Transistors - BJT 60V 300mW
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