MMBTH10LT1G

MMBTH10LT1G vs MMBTH10LT1G , MAX6407BS2 vs MMBTH10LT1G 3E

 
PartNumberMMBTH10LT1GMMBTH10LT1G , MAX6407BS2MMBTH10LT1G 3E
DescriptionBipolar Transistors - BJT 25V VHF Mixer NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max25 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO3 V--
Collector Emitter Saturation Voltage0.5 V--
Gain Bandwidth Product fT650 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBTH10L--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
MMBTH10LT1G Bipolar Transistors - BJT 25V VHF Mixer NPN
MMBTH10LT1G , MAX6407BS2 New and Original
MMBTH10LT1G 3E New and Original
MMBTH10LT1G 3EM New and Original
MMBTH10LT1G(3EM N) New and Original
MMBTH10LT1G/MMBTH10 New and Original
MMBTH10LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
MMBTH10LT1G Bipolar Transistors - BJT 25V VHF Mixer NPN
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