PartNumber | MMDT5401-7-F | MMDT5401Q-7-F | MMDT5451-7 |
Description | Bipolar Transistors - BJT -150V 200mW | Bipolar Transistors - BJT SS Hi Voltage Transistor | Bipolar Transistors - BJT 160 / 160V 200mW |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | - | N |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-223-3 | SOT-363-6 |
Transistor Polarity | PNP | PNP | NPN, PNP |
Configuration | Dual | Single | Dual |
Collector Emitter Voltage VCEO Max | - 150 V | - 150 V | 150 V, 160 V |
Collector Base Voltage VCBO | - 160 V | - 160 V | 160 V, 180 V |
Emitter Base Voltage VEBO | - 5 V | - 6 V | - 5 V |
Collector Emitter Saturation Voltage | - 0.5 V | - 0.5 V | 0.2 V |
Maximum DC Collector Current | 0.2 A | - | 0.2 A |
Gain Bandwidth Product fT | 300 MHz | 150 MHz | 300 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | MMDT54 | - | MMDT5451 |
DC Current Gain hFE Max | 240 | 900 | 240 |
Height | 1 mm | - | 1 mm |
Length | 2.2 mm | - | 2.2 mm |
Packaging | Reel | - | - |
Width | 1.35 mm | - | 1.35 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Continuous Collector Current | - 0.2 A | - 200 mA | - 0.2 A |
DC Collector/Base Gain hfe Min | 60 | - | 60 |
Pd Power Dissipation | 200 mW | 3 W | 200 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000212 oz | - | 0.000212 oz |
Technology | - | Si | - |
Qualification | - | AEC-Q101 | - |