PartNumber | MMIX1T132N50P3 | MMIX1T550N055T2 | MMIX1T600N04T2 |
Description | Discrete Semiconductor Modules Disc MSFT SMPD Pkg-HiPerFETMSFT SMPD-B | MOSFET SMPD MOSFETs Power Device | MOSFET 40V 600A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | - |
Product | Power MOSFET Modules | - | - |
Type | Polar3 | TrenchT2 GigaMOS Power MOSFET | - |
Vgs Gate Source Voltage | 30 V | 20 V | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 15 ns | 230 ns | - |
Id Continuous Drain Current | 63 A | 550 A | 600 A |
Pd Power Dissipation | 520 W | 830 W | - |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 43 mOhms | 1.3 mOhms | 1.3 mOhms |
Rise Time | 19 ns | 40 ns | - |
Factory Pack Quantity | 20 | 20 | 20 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | Polar3 | HiPerFET | HiPerFET |
Typical Turn Off Delay Time | 90 ns | 90 ns | - |
Typical Turn On Delay Time | 42 ns | 45 ns | - |
Vds Drain Source Breakdown Voltage | 500 V | 55 V | 40 V |
Vgs th Gate Source Threshold Voltage | 3 V | 3.8 V | - |
Technology | - | Si | Si |
Package / Case | - | SMPD-24 | SMPD-24 |
Qg Gate Charge | - | 595 nC | - |
Channel Mode | - | Enhancement | - |
Packaging | - | Tube | Tube |
Height | - | 5.7 mm | - |
Length | - | 25.25 mm | - |
Series | - | MMIX1T550N055 | MMIX1T600N04 |
Width | - | 23.25 mm | - |
Forward Transconductance Min | - | 90 S | - |