MMST2907AT

MMST2907AT146 vs MMST2907AT

 
PartNumberMMST2907AT146MMST2907AT
DescriptionBipolar Transistors - BJT PNP 60V 0.6ATrans GP BJT PNP 60V 0.6A 3-Pin SMT T/R
ManufacturerROHM SemiconductorRohm Semiconductor
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single
RoHSY-
Mounting StyleSMD/SMTSMD/SMT
Transistor PolarityPNPPNP
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max- 60 V-
Collector Base Voltage VCBO- 60 V-
Emitter Base Voltage VEBO- 5 V-
Collector Emitter Saturation Voltage- 1.6 V- 1.6 V
Maximum DC Collector Current0.6 A0.6 A
Gain Bandwidth Product fT200 MHz200 MHz
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesMMST2907AMMST2907A
DC Current Gain hFE Max300300
Height1.1 mm-
Length2.9 mm-
PackagingReelDigi-ReelR Alternate Packaging
Width1.6 mm-
BrandROHM Semiconductor-
Continuous Collector Current- 0.6 A- 0.6 A
DC Collector/Base Gain hfe Min50-
Pd Power Dissipation200 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # AliasesMMST2907A-
Package Case-TO-236-3, SC-59, SOT-23-3
Mounting Type-Surface Mount
Supplier Device Package-SMT3
Power Max-200mW
Transistor Type-PNP
Current Collector Ic Max-600mA
Voltage Collector Emitter Breakdown Max-60V
DC Current Gain hFE Min Ic Vce-100 @ 150mA, 10V
Vce Saturation Max Ib Ic-1.6V @ 50mA, 500mA
Current Collector Cutoff Max-100nA
Frequency Transition-200MHz
Pd Power Dissipation-0.2 W
Collector Emitter Voltage VCEO Max-- 60 V
Collector Base Voltage VCBO-- 60 V
Emitter Base Voltage VEBO-- 5 V
DC Collector Base Gain hfe Min-50
Manufacturer Part # Description RFQ
MMST2907AT146 Bipolar Transistors - BJT PNP 60V 0.6A
MMST2907AT Trans GP BJT PNP 60V 0.6A 3-Pin SMT T/R
MMST2907AT146 TRANS PNP 60V 0.6A SOT-346
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