MMUN2211LT1

MMUN2211LT1G vs MMUN2211LT106 vs MMUN2211LT1G , MAX6380UR

 
PartNumberMMUN2211LT1GMMUN2211LT106MMUN2211LT1G , MAX6380UR
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min35, 60--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation246 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMUN2211L--
PackagingReel--
DC Current Gain hFE Max35--
Height0.94 mm--
Length2.9 mm--
Width1.3 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
MMUN2211LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
MMUN2211LT106 New and Original
MMUN2211LT1G , MAX6380UR New and Original
MMUN2211LT1G 8A New and Original
MMUN2211LT1G A8A New and Original
MMUN2211LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
MMUN2211LT1 Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
MMUN2211LT1 TRANS PREBIAS NPN 246MW SOT23-3
MMUN2211LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
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