PartNumber | MPS6601 | MPS6601RLRA | MPS6601G |
Description | Bipolar Transistors - BJT | Bipolar Transistors - BJT 1A 25V NPN | Bipolar Transistors - BJT 1A 25V NPN |
Manufacturer | Diodes Incorporated | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 25 V | 25 V | 25 V |
Collector Base Voltage VCBO | 25 V | 25 V | 25 V |
Emitter Base Voltage VEBO | 4 V | 4 V | 4 V |
Collector Emitter Saturation Voltage | 0.6 V | 0.6 V | 0.6 V |
Maximum DC Collector Current | 1 A | 1 A | 1 A |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | 100 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | MPS6601 | - | - |
DC Current Gain hFE Max | 50 at 100 mA, 1 V | - | - |
Height | 4.01 mm | 5.33 mm (Max) | 5.33 mm (Max) |
Length | 4.77 mm | 5.2 mm (Max) | 5.2 mm (Max) |
Width | 2.41 mm | 4.19 mm (Max) | 4.19 mm (Max) |
Brand | Diodes Incorporated | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | 0.5 A | 0.5 A | 0.5 A |
Pd Power Dissipation | 1 W | 1 W | 1 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.016000 oz | - | - |
Packaging | - | Reel | Bulk |
DC Collector/Base Gain hfe Min | - | 50 | 50 |
Factory Pack Quantity | - | 2000 | 5000 |