MRF101

MRF10120 vs MRF101AN vs MRF101AN-230MHZ

 
PartNumberMRF10120MRF101ANMRF101AN-230MHZ
DescriptionRF Bipolar TransistorsRF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 VMRF100AN REFERENCE BRD - 233MHZ
ManufacturerMACOMNXP-
Product CategoryRF Bipolar TransistorsRF MOSFET Transistors-
Transistor TypeBipolar Power--
TechnologySiSi-
Transistor PolarityNPNN-Channel-
DC Collector/Base Gain hfe Min20--
Collector Emitter Voltage VCEO Max55 V--
Emitter Base Voltage VEBO3.5 V--
Continuous Collector Current15 A--
Minimum Operating Temperature- 65 C- 40 C-
Maximum Operating Temperature+ 200 C+ 150 C-
ConfigurationSingle--
Package / Case355C-2TO-220-3-
Operating Frequency1.215 GHz1.8 MHz to 250 MHz-
TypeRF Bipolar PowerRF Power MOSFET-
BrandMACOMNXP Semiconductors-
Pd Power Dissipation380 W182 W-
Product TypeRF Bipolar TransistorsRF MOSFET Transistors-
Factory Pack Quantity20250-
SubcategoryTransistorsMOSFETs-
Id Continuous Drain Current-8.8 A-
Vds Drain Source Breakdown Voltage-133 V-
Gain-21.1 dB-
Output Power-100 W-
Mounting Style-Through Hole-
Packaging-Tube-
Series-MRF101-
Forward Transconductance Min-7.1 S-
Number of Channels-1 Channel-
Vgs Gate Source Voltage-- 6 V, + 10 V-
Vgs th Gate Source Threshold Voltage-1.7 V-
Part # Aliases-935377233129-
Manufacturer Part # Description RFQ
MACOM
MACOM
MRF10120 RF Bipolar Transistors
NXP Semiconductors
NXP Semiconductors
MRF101AN RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
MRF101BN RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
MRF101AN RF TRANSISTOR 100W TO-220
MRF101AN-230MHZ MRF100AN REFERENCE BRD - 233MHZ
MRF101AN-27MHZ MRF100AN REFERENCE BOARD - 27MHZ
MRF101AN-81MHZ MRF100AN REFERENCE BOARD - 81MHZ
MRF101BN RF TRANSISTOR 100W TO-220
MRF10150 RF POWER TRANSISTOR
MRF1015MB New and Original
MRF10170 New and Original
MRF10120-1 RF POWER TRANSISTOR
MACOM
MACOM
MRF10120 RF Bipolar Transistors
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