MRF1513

MRF1513NT1 vs MRF1513 vs MRF1513NT1G

 
PartNumberMRF1513NT1MRF1513MRF1513NT1G
DescriptionRF MOSFET Transistors RF LDMOS FET PLD1.5
ManufacturerNXPFREESCALEFREESCAL
Product CategoryRF MOSFET TransistorsRF FETsIC Chips
RoHSE--
Transistor PolarityN-ChannelN-Channel-
TechnologySiSi-
Id Continuous Drain Current2 A--
Vds Drain Source Breakdown Voltage40 V--
Gain15 dB15 dB-
Output Power3 W3 W-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePLD-1.5--
PackagingReelReel-
ConfigurationSingle--
Height1.83 mm--
Length6.73 mm--
Operating Frequency520 MHz520 MHz-
SeriesMRF1513NT1MRF1513NT1-
TypeRF Power MOSFETRF Power MOSFET-
Width5.97 mm--
BrandNXP / Freescale--
Channel ModeEnhancement--
Moisture SensitiveYes--
Pd Power Dissipation31.25 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Vgs Gate Source Voltage20 V--
Vgs th Gate Source Threshold Voltage1.7 V--
Part # Aliases935317216515--
Unit Weight0.009877 oz0.009877 oz-
Package Case-PLD-1.5-
Pd Power Dissipation-31.25 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-2 A-
Vds Drain Source Breakdown Voltage-40 V-
Vgs th Gate Source Threshold Voltage-1.7 V-
Manufacturer Part # Description RFQ
NXP / Freescale
NXP / Freescale
MRF1513NT1 RF MOSFET Transistors RF LDMOS FET PLD1.5
MRF1513 New and Original
MRF1513NT1G New and Original
MRF1513T1 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MRF1513T1/MRF1513NT1 New and Original
NXP Semiconductors
NXP Semiconductors
MRF1513NT1 FET RF 40V 520MHZ PLD-1.5
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