PartNumber | MRF21010LSR1 | MRF21010LR5 | MRF21010LR1 |
Description | RF MOSFET Transistors 10W 28V 2.1 GHZ LDMOS | FET RF 65V 2.17GHZ NI-360 | FET RF 65V 2.17GHZ NI-360 |
Manufacturer | NXP | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Vds Drain Source Breakdown Voltage | 65 V | - | - |
Gain | 13.5 dB | - | - |
Output Power | 2.1 W | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | NI-360S-3 | - | - |
Packaging | Reel | - | - |
Configuration | Single | - | - |
Height | 3.94 mm | - | - |
Length | 9.78 mm | - | - |
Operating Frequency | 2.1 GHz | - | - |
Type | RF Power MOSFET | - | - |
Width | 5.97 mm | - | - |
Brand | NXP / Freescale | - | - |
Channel Mode | Enhancement | - | - |
Pd Power Dissipation | 43.75 W | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 0.5 V, 15 V | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Unit Weight | 0.031651 oz | - | - |