PartNumber | MRF323 | MRF372R3 | MRF373ALR5 |
Description | RF Bipolar Transistors RF Transistor | RF MOSFET Transistors 180W 860MHZ NI-860MOD | RF MOSFET Transistors 75W 860MHZ LDMOS NI360L |
Manufacturer | Advanced Semiconductor, Inc. | NXP | NXP |
Product Category | RF Bipolar Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | N |
Transistor Type | Bipolar Power | - | - |
Technology | Si | Si | Si |
Transistor Polarity | NPN | N-Channel | N-Channel |
DC Collector/Base Gain hfe Min | 20 | - | - |
Collector Emitter Voltage VCEO Max | 33 V | - | - |
Emitter Base Voltage VEBO | 4 V | - | - |
Continuous Collector Current | 2.2 A | - | - |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 200 C | + 150 C | + 150 C |
Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
Package / Case | Case244-04 | NI-860C3-5 | NI-360-3 |
Packaging | Tray | Reel | Reel |
Operating Frequency | 500 MHz | 0.47 GHz to 0.86 GHz | - |
Type | RF Bipolar Power | RF Power MOSFET | RF Power MOSFET |
Brand | Advanced Semiconductor, Inc. | NXP / Freescale | NXP / Freescale |
Maximum DC Collector Current | 3 A | - | - |
Pd Power Dissipation | 55 W | 350 W | 197 W |
Product Type | RF Bipolar Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Subcategory | Transistors | MOSFETs | MOSFETs |
Id Continuous Drain Current | - | 17 A | - |
Vds Drain Source Breakdown Voltage | - | 68 V | 70 V |
Gain | - | 17 dB | - |
Output Power | - | 180 W | - |
Configuration | - | Single | Single |
Height | - | 5.69 mm | 2.8 mm |
Length | - | 34.16 mm | 9.27 mm |
Width | - | 10.31 mm | 5.97 mm |
Channel Mode | - | Enhancement | Enhancement |
Factory Pack Quantity | - | 250 | 50 |
Vgs Gate Source Voltage | - | - 0.5 V, 15 V | - 0.5 V, 15 V |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Unit Weight | - | 0.223087 oz | 0.103628 oz |